Search results for "Amorphous semiconductors"

showing 7 items of 7 documents

Finite-size scaling of charge carrier mobility in disordered organic semiconductors

2016

Simulations of charge transport in amorphous semiconductors are often performed in microscopically sized systems. As a result, charge carrier mobilities become system-size dependent. We propose a simple method for extrapolating a macroscopic, nondispersive mobility from the system-size dependence of a microscopic one. The method is validated against a temperature-based extrapolation [A. Lukyanov and D. Andrienko, Phys. Rev. B 82, 193202 (2010)]. In addition, we provide an analytic estimate of system sizes required to perform nondispersive charge transport simulations in systems with finite charge carrier density, derived from a truncated Gaussian distribution. This estimate is not limited t…

Amorphous semiconductorsCondensed Matter - Materials ScienceMaterials scienceStatistical Mechanics (cond-mat.stat-mech)Condensed matter physicsCharge carrier mobilityGaussianExtrapolationMaterials Science (cond-mat.mtrl-sci)FOS: Physical sciences02 engineering and technology021001 nanoscience & nanotechnology01 natural sciencesOrganic semiconductorsymbols.namesakeLattice (order)0103 physical sciencessymbolsCharge carrier010306 general physics0210 nano-technologyScalingCondensed Matter - Statistical MechanicsPhysical Review B
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Characterization of Thin Passive Film-Electrolyte Junctions. The Amorphous Semiconductor (a-SC) Schottky Barrier Approach.

2017

A detailed study of the electronic properties of thin (< 20 nm) anodic TiO2 potentiostatically grown on titanium in two different solutions is presented. The results show that the nature of the anodizing solution affects the electronic properties of the anodic film and in particular the density of electronic state (DOS) distribution. Different DOS were derived from the experimental data analyzed according to the theory of amorphous semiconductor (a-SC) Schottky barrier. It is shown that the usual non-linear and frequency dependent Mott-Schottky plots are in agreement with expected theoretical behaviour of a-SC Schottky barrier. It is shown the importance of the DOS distribution in determini…

Amorphous semiconductorsEngineeringSettore ING-IND/23 - Chimica Fisica Applicatabusiness.industrySchottky barrieranodic TiO2 Thin Passive Film Amorphous Semiconductor Electrochemical Impedance Spectroscopy electronic properties theory of amorphous semiconductor (a-SC) Schottky barrierElectrical engineeringOptoelectronicsElectrolytebusinessCharacterization (materials science)
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&lt;title&gt;Holographic properties of dielectric crystals and amorphous semiconductor films&lt;/title&gt;

2001

Holographic recording properties and mechanisms are analyzed and compared in dielectric electrooptic crystals (EOC), dielectric colored alkali halide crystals (AHC) and amorphous semiconductor films (ASF) basing on author's investigations as well as on the literature data. Holographic photosensitivity parameters are introduced enabling the characterization of the recording mechanism efficiency independently of the particular optical and geometrical sample parameters, and allowing also for recording optimization. Ultimate specific recording energies for EOC, AHC and ASF are theoretically estimated. It is concluded that the ultimate recording energy for both crystalline and amorphous material…

Amorphous semiconductorsMaterials sciencebusiness.industryOptical engineeringHolographyDielectricCharacterization (materials science)Amorphous solidlaw.inventionOpticslawbusinessMaterial propertiesHolographic recordingOptics of Crystals
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Correlated barrier hopping in NiO films

1991

The ac conduction in NiO films has been investigated in the frequency range 10 Hz < v < 10^9 Hz and at temperatures between 10 and 300 K. The frequency and the temperature dependence of the electrical conductivity can be consistently explained within a model developed for the mechanism of charge transfer in amorphous semiconductors which proposes that charge carriers hop over potential barriers between defect sites, the height of the barriers being correlated with the intersite separation.

Amorphous semiconductorsNickelMaterials scienceCondensed matter physicschemistryOver potentialElectrical resistivity and conductivitySemiconductor materialsNon-blocking I/Ochemistry.chemical_elementCharge carrierThermal conductionPhysical Review B
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&lt;title&gt;Holographic recording in amorphous semiconductor films&lt;/title&gt;

1997

The present state of the real time holographic recording in amorphous semiconductor films is reviewed including mechanisms, parameters, properties and applications. Effects of the coherent, incoherent and relaxational self- enhancement as well as the influence of the film structure relaxation are considered. Quasi-permanent sub-band-gap light holographic recording is reported for the first time. 157

DiffractionAmorphous semiconductorsMaterials sciencebusiness.industryHolographylaw.inventionCondensed Matter::Materials ScienceOpticsModulationlawOptoelectronicsRelaxation (physics)Spatial frequencybusinessHolographic recordingRefractive indexSPIE Proceedings
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The Amorphous Semiconductor Schottky Barrier Approach to Study the Electronic Properties of Anodic Films on Ti

2017

A detailed study of the electronic properties of thin (>20 nm) anodic TiO2 potentiostatically grown on titanium in two different solutions is presented. The results show that the nature of the anodizing solution affects the electronic properties of the anodic film and, more specifically, the density of electronic states (DOS) distribution. Different DOS were derived from the experimental data analyzed according to the theory of amorphous semiconductor (a-SC) Schottky barrier. It is shown that the usual non-linear and frequency dependent Mott-Schottky plots are in agreement with expected theoretical behavior of a-SC Schottky barrier.

Materials Chemistry2506 Metals and AlloysAmorphous semiconductorsMaterials scienceRenewable Energy Sustainability and the Environmentbusiness.industryElectronic Optical and Magnetic MaterialSchottky barrierSurfaces Coatings and Film02 engineering and technology010402 general chemistry021001 nanoscience & nanotechnologyCondensed Matter PhysicsMetal–semiconductor junction01 natural sciences0104 chemical sciencesSurfaces Coatings and FilmsElectronic Optical and Magnetic MaterialsAnodeSettore ING-IND/23 - Chimica Fisica ApplicataMaterials ChemistryElectrochemistryOptoelectronics0210 nano-technologybusinessElectronic propertiesJournal of The Electrochemical Society
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Photocurrent spectroscopy in passivity studies

2018

The aim of this article is to present photocurrent spectroscopy as useful in situ technique for the physicochemical characterization of passive films and corrosion layers. The response of (both amorphous and crystalline) semiconductor/electrolyte junction under irradiation is treated and discussed in order to get information about solid-state properties such as band gap and flat band potential. The possibility to use Photocurrent Spectroscopy (PCS), in a quantitative way, to get information on the composition of corrosion layers is discussed through a semiempirical correlation between the band gap of the oxides (or hydroxides) and the difference of electronegativity of their constituents. F…

Materials scienceBand gapPassive film/electrolyte energetics02 engineering and technologyElectrolyte01 natural sciencesCorrosionElectronegativityPhotoelectrochemistryOptical band gap0103 physical sciencesSpectroscopy010302 applied physicsPhotocurrentBilayer filmsbusiness.industryCorrosion layersOxide layersAmorphous semiconductors021001 nanoscience & nanotechnologyAmorphous solidSemiconductorHydroxide layersSettore ING-IND/23 - Chimica Fisica ApplicataOptoelectronicsPassive films0210 nano-technologybusinessFlat band potential
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